Semicnductor ierīce modelēšana

S

suresh3982

Guest
Hi,
i am using " PSpice
" version

Var kāds iedodiet man simulācijas circuit par "vi īpašību dubultās vārtu KTO MOSFET"
i am, izmantojot "PSpice"
versija

 
Es nedomāju, ka daudz modeļu aptuveni divējāda vārtiem MOSFETs.Varbūt tas varētu dot jums ideja, no kuras jūs varat izveidot savu.

Keith

* SYM = DGMOS
. SUBCKT BF993 1 2 3 4
* Savienojumi Drain Gate2 Gate1 Source
* Dual Gate MOSFET
MD1 5 3 4 4 BF993G1
MD2 1 2 5 4 BF993G2 W = 65U
. MODEL BF993G1 NMOS (LĪMENIS = 1 VTO =- 1,0 KP = 23m GAMMA = 7.4U
PHI =. 75 LAMBDA = 13.75M RS = 2,5 IS = 31.2F PB =. 8 MJ =. 46
CBD = 9.66P CBS = 11.5P CGSO = 600P CGDO = 500P CGBO = 61.4N
. MODEL BF993G2 NMOS (LĪMENIS = 1 VTO =-. 9 KP = 25M GAMMA = 30.4U
PHI =. 75 LAMBDA = 23.75M RD = 74,4 IS = 31.2F PB =. 8 MJ =. 46
CBD = 9.66P CBS = 11.5P CGSO = 600P CGDO = 500P CGBO = 61.4N
* Siemens
* N-kanāla izzušana DG-MOSFET
. BEIGAS
**********
* SYM = DGMOS
. SUBCKT BF980A 1 2 3 4
* Savienojumi Drain Gate2 Gate1 Source
* Dual Gate MOSFET
MD1 5 3 4 4 BF980AA
MD2 1 2 5 4 BF980AB W = 50U
. MODEL BF980AA NMOS (LĪMENIS = 1 VTO =- 1,0 KP = 17.M GAMMA = 4.34U
PHI =. 75 LAMBDA = 4.16M RS = 3,2 IS = 20.8F PB =. 8 MJ =. 46
CBD = 2.89P CBS = 3.47P CGSO = 300P CGDO = 250P CGBO = 25.4N)
. MODEL BF980AB NMOS (LĪMENIS = 1 VTO =-. 9 KP = 20M GAMMA = 17.47U
PHI =. 75 LAMBDA = 14.16M RD = 30 IS = 20.8F PB =. 8 MJ =. 46
CBD = 2.89P CBS = 3.47P CGSO = 300P CGDO = 250P CGBO = 25.4N)
* Philips
* N-kanāla izzušana DG-MOSFET
. BEIGAS
**********
* SYM = DGMOS
. SUBCKT MN201 1 2 3 4
* Savienojumi Drain Gate2 Gate1 Source
* Dual Gate MOSFET
MD1 5 3 4 4 MN201-1
MD2 1 2 5 4 MN201-2 W = 35U
. MODEL MN201-1 NMOS (LĪMENIS = 1 VTO =- 1,45 KP = 11.8M GAMMA = 3.26U
PHI =. 75 LAMBDA = 30M RD = 1M RS = 20,8 IS = 25.F PB =. 8 MJ =. 46
CBD = 6.64P CBS = 7.97P CGSO = 168P CGDO = 140P CGBO = 32.6N)
. MODEL MN201-2 NMOS (LĪMENIS = 1 VTO =- 1,00 KP = 12.5M GAMMA = 27.26U
PHI =. 75 LAMBDA = 37m RD = 15,3 RS = 1M IS = 30F PB =. 8 MJ =. 46
CBD = 6.64P CBS = 7.97P CGSO = 168P CGDO = 140P CGBO = 32.6N)
* Motorola
* N-kanāla izzušana DG-MOSFET
. BEIGAS
*************

 

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